Device Electronics
Fall, Spring
Required for EE; Technical Elective for CE
Catalog Data: 

Electronic properties of semiconductors; carrier transport phenomena; P-N junctions; bipolar, unipolar, microwave and photonic devices.

Grading:  Regular grades are awarded for this course: A B C D E.

Special exam:  course may be taken by special exam for credit (not for grade).

Usually offered:  Fall, Spring.

ECE 351C

Devices for Integrated Circuits by H. Craig Casey Jr., John Wiley & Sons, 1999

Course Learning Outcomes: 

By the end of this course, the student should be able to:

  1. Understand basic cubic crystal structure and origin of semiconductor characteristics: C-band, V-band, energy gap, dopant atoms, host atoms, intrinsic and extrinsic materials, fixed charges and mobile carriers.
  2. Understand density of states and Fermi-Dirac distribution functions, effective mass, semiconductor band gap and carrier statistics, kinetic and potential carrier energies.
  3. Calculate properties of intrinsic and extrinsic semiconductor materials, e.g., Fermi levels, carrier concentrations.
  4. Apply principles of carrier drift to determine field dependent transport, conductivity, resistivity, resistance, and sheet resistance.
  5. Apply principles of carrier diffusion to determine carrier gradient dependent transport and derive the Einstein relation.
    Understand band diagrams and determine carrier potential and kinetic energies.
  6. Utilize defect densities and carrier recombination processes to calculate generation and recombination rates in semiconductor devices and materials.
  7. Apply continuity equation to solve dynamics of carrier transport and recombination in semiconductor devices and materials
  8. Apply Poisson’s equation, band structure, and the depletion approximation to derive and calculate workfunctions, biased and unbiased PN and MS junction potentials, and depletion region widths.
  9. Calculate carrier densities, quasi Fermi levels, and currents in biased metal-semiconductor and  PN junctions .
    Determine device/material parameters given an experimental C-V characteristic for MS, p-n junction and MOS capacitor structures.
  10. Apply Poisson’s equation and workfunctions to calculate channel properties and ideal and non-ideal flatband and threshold voltages for MOS devices.
  11. Extract MOS transistor parameters from device process variables such as substrate doping and channel length.
    Calculate and graph MOS transistor current-voltage characteristics for simple prototype structures, using constant bulk charge models.
  12. Utilize principles of carrier transport and recombination, the continuity and Poisson’s equations, and the law of the junction to calculate current gain in bipolar junction transistors.
  13. Extract bipolar junction transistor parameters from device process variables such as junction doping and base width.
  14. Calculate and graph bipolar junction transistor current-voltage characteristics for simple short-base prototype structures.
    Identify deviations in ideal and real device characteristics.
Course Topics: 
  • Chapter 2-The hydrogen atom, Schrödinger Equation, multi electron atoms, crystal structure, thermal equilibrium, energy bands in solids, electrons and holes, effective mass, density of electron states, intrinsic semiconductors, kinetic and potential carrier energy. Intrinsic and extrinsic semiconductors and carrier concentrations.
  • Chapter 3-Carrier drift, mobility, resistivity, IC resistors, carrier diffusion, diffusivity, Einstein relation, excess carrier concentrations, generation/recombination processes, carrier injection, continuity equation and applications to semiconductor problems. 
  • Chapter 4-Equilibrium and non-equilibrium PN junction band diagrams, PN junction electrostatic analysis and steady analysis, I-V characteristics, forward and reverse bias operation of the diode, Carrier distributions in the diode under different bias. Ideal and non-ideal device behavior, including: space charge recombination and generation currents, high current effects, temperature effects,
  • Chapter 5-Reverse bias breakdown mechanisms and characteristics, junction capacitance and diffusion capacitance.
  • Chapter 7-MOS Capacitor thermal equilibrium band diagram, ideal and non-ideal flatband voltage, the effects of gate bias on regions of operation and the band diagrams, surface potential, threshold voltage, non-ideal oxides, C-V characteristics for ideal and non-ideal MOS capacitors.
  • Chapter 8-MOS Field Effect Transistors, types, I-V characteristics, properties of regions of device operation, Long channel and short channel device behavior.
  • Chapter 9-Bipolar junction devices electrostatic analysis, band diagrams, steady state analysis, I-V characteristics, deviations of real device behavior from ideal behavior, modes of operation, carrier distributions.
  • Chapter 6-Metal semiconductor devices, Shottky barriers and ohmic contacts, electrostatic analysis, barrier height, band diagrams, carrier concentration, steady state analysis, I-V characteristics.
Class/Laboratory Schedule: 

Two-75 minute lectures per week;
Homework: Will be assigned, but not collected or graded.
Answers for homework problems will be made available.
Pop Quizzes will be given throughout the semester. 
Tests:  There will be three 75 min. tests, and a comprehensive final exam. Tests 2 and 3 will emphasize material covered since the previous test; however, the material is cumulative such that material covered on Test 1 will be required for Test 2 and so on. 

Relationship to Student Outcomes: 

a) an ability to apply knowledge of mathematics, science, and engineering (High)

b) an ability to design and conduct experiments, as well as to analyze and interpret data (Low)

c) an ability to design a system, component, or process to meet desired needs within realistic constraints such as economic,  environmental, social, political, ethical, health and safety, manufacturability, and sustainability  (Medium)

d) an ability to function on multi-disciplinary terms (Low)

e) an ability to identify, formulate, and solve engineering problems (High)

g) an ability to communicate effectively (Low)

k) an ability to use the techniques, skills, and modern engineering tools necessary for engineering practice. (High)

Prepared by: 
Dr. H. G. Parks
Prepared Date: 

University of Arizona College of Engineering