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ECE352 -- Device Electronics (3 units)
Description: Electronic properties of semiconductors; carrier transport phenomena; P-N junctions; bipolar, unipolar, microwave and photonic devices.
Grading: Regular grades are awarded for this course: A B C D E
Streetman, B.G. and S.K. Banerjee. Solid State Electronic Devices. 7th ed. Pearson. 2014.
Suggested but not required: Casey, J. Craig. Devices for Integrated Circuits. John Wiley & Sons. 1999.
By the end of this course, the student should be able to:
Chapter 1: Semiconductor device fabrication.
Chapter 2: The hydrogen atom, Schroedinger Equation, multi-electron atoms, crystal structure, thermal equilibrium, energy bands in solids, electrons and holes, effective mass, density of electron states, intrinsic semiconductors, kinetic and potential carrier energy, intrinsic and extrinsic semiconductors and carrier concentrations.
Chapter 3: Carrier drift, mobility, resistivity, IC resistors, carrier diffusion, diffusivity, Einstein relation, excess carrier concentrations, generation/recombination processes, carrier injection, continuity equation and applications to semiconductor problems.
Chapter 4: Equilibrium and non-equilibrium PN junction band diagrams, PN junction analysis, I-V characteristics, forward and reverse bias operation of the diode, Carrier distributions in the diode under different bias. Ideal and non-ideal device behavior, including: space charge recombination and generation currents, high current effects, temperature effects.
Chapter 5: Reverse bias breakdown mechanisms and characteristics, junction capacitance and diffusion capacitance.
Chapter 6: Metal semiconductor devices, Shottky barriers and ohmic contacts, electrostatic analysis, barrier height, band diagrams, carrier concentration, steady state analysis, I~V characteristics.
Chapter 7: MOS Capacitor thermal equilibrium band diagram, ideal and non-ideal flatband voltage, the effects of gate bias on regions of operation and the band diagrams, surface potential, threshold voltage, non-ideal oxides, energy band characteristics for ideal and non-ideal MOS capacitors.
Chapter 8: MOS Field Effect Transistors, types, I-V characteristics, properties of regions of device operation.
Chapter 9 (May not cover): Bipolar junction devices, band diagrams, I-V characteristics, deviations of real device behavior from ideal behavior, modes of operation, carrier distributions.
Three, 50-minute lectures per week
ECE 352 contributes directly to the following specific Electrical and Computer Engineering Student Outcomes of the ECE department: